Acoustic wave device

ABSTRACT

An acoustic wave device includes a piezoelectric substrate made of LiNbO3 or LiTaO3 and including first and second main surfaces that face each other, an IDT electrode provided on the first main surface of the piezoelectric substrate, and a Li2CO3 layer provided on the second main surface of the piezoelectric substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority to Japanese PatentApplication No. 2019-140698 filed on Jul. 31, 2019. The entire contentsof this application are hereby incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to an acoustic wave device that includes apiezoelectric substrate made of LiNbO₃ or LiTaO₃.

2. Description of the Related Art

To date, various acoustic wave devices have been proposed that usepiezoelectric substrates made of LiNbO₃, LiTaO₃, and so forth. Apiezoelectric wafer is transported by a transporting arm during themanufacture of these types of acoustic wave devices. The manufacturingprocess may stop if the piezoelectric wafer becomes charged and sticksto the transporting arm.

In the acoustic wave device disclosed in Japanese Unexamined PatentApplication Publication No. 2001-102898, films made of a resistivematerial are provided on both main surfaces of a piezoelectric substratein order to suppress charging of the piezoelectric substrate. It isdescribed that it is desirable to use an organic material, an inorganicoxide such as SiO₂, Al₂O₃ or MgO, or semi-conductive material such as Sias the resistive material. The films made of a resistive material areformed by sputtering.

On the other hand, Japanese Unexamined Patent Application PublicationNo. 2007-165949 discloses an acoustic wave device having a WLPstructure. In this case, an Al film or the like is formed by vapordeposition or plating on the surface of a piezoelectric substrate thatis on the opposite side from the surface of the piezoelectric substratewhere an IDT electrode will be provided.

The film made of a resistive material disclosed in Japanese UnexaminedPatent Application Publication No. 2001-102898 is formed by sputtering.Therefore, vacuum batch processing is necessary. Consequently, there isa problem in that productivity is poor. In addition, there is a risk ofcracks occurring in the piezoelectric substrate due to heating of thepiezoelectric substrate during the sputtering process.

In the acoustic wave device disclosed in Japanese Unexamined PatentApplication Publication No. 2007-165949, the Al film is formed by vapordeposition or plating. Vacuum batch processing is necessary during thevapor deposition and therefore productivity is poor. In addition, thereis a risk of cracks occurring in the piezoelectric substrate due toheating of the piezoelectric substrate during the vapor deposition.

Furthermore, a large amount of time is necessary and productivity ispoor when an Al film or the like is formed by plating.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide acoustic wavedevices that each have excellent productivity and in each of which apiezoelectric substrate thereof is not susceptible to becoming chargedand consequently transportation failures due to charging are unlikely tooccur.

A preferred embodiment of the present invention provides an acousticwave device that includes a piezoelectric substrate made of LiNbO₃ orLiTaO₃ and including first and second main surfaces that face eachother; a functional electrode that is provided on the first main surfaceof the piezoelectric substrate and that excites acoustic waves; and aLi₂CO₃ layer that is provided on the second main surface of thepiezoelectric substrate.

The acoustic wave devices according to the preferred embodiments of thepresent invention each have excellent productivity and a piezoelectricsubstrate thereof is not susceptible to becoming charged. Therefore,transportation failures arising from charging are unlikely to occur.

The above and other elements, features, steps, characteristics andadvantages of the present invention will become more apparent from thefollowing detailed description of the preferred embodiments withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a front sectional view of an acoustic wave device according toa first preferred embodiment of the present invention.

FIG. 2 is a front sectional view of an acoustic wave device according toa second preferred embodiment of the present invention.

FIG. 3 is a diagram illustrating the relationship between laser outputand surface resistivity when a piezoelectric substrate made of LiNbO₃ isirradiated with a laser.

FIG. 4 is a diagram illustrating the relationship between laser outputand surface resistivity when a piezoelectric substrate made of LiTaO₃ isirradiated with a laser.

FIG. 5 is a diagram illustrating XPS spectra of C1s of LiNbO₃ substratesof acoustic wave devices of an example 1 of a preferred embodiment ofthe present invention and a comparative example 1.

FIG. 6 is a diagram illustrating XPS spectra of Li1s of LiNbO₃substrates of the acoustic wave devices of example 1 and comparativeexample 1.

FIG. 7 is a diagram illustrating XPS spectra of C1s of second mainsurfaces of piezoelectric substrates made of LiTaO₃ in acoustic wavedevices of an example 2 of a preferred embodiment of the presentinvention and a comparative example 2.

FIG. 8 is a diagram illustrating XPS spectra of Li1s of the second mainsurfaces of piezoelectric substrates made of LiTaO₃ in the acoustic wavedevices of example 2 and comparative example 2.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereafter, the present invention will be clarified by describingpreferred embodiments of the present invention with reference to thedrawings.

The preferred embodiments described in the present specification arenon-limiting illustrative examples and portions of the configurationsillustrated in different preferred embodiments can be substituted forone another or combined with one another.

FIG. 1 is a front sectional view of an acoustic wave device according toa first preferred embodiment of the present invention.

An acoustic wave device 1 preferably has a WLP structure. The acousticwave device 1 includes a piezoelectric substrate 2 preferably made ofLiNbO₃, for example. The piezoelectric substrate 2 may instead be madeof LiTaO₃, for example. The piezoelectric substrate 2 includes a firstmain surface 2 a and a second main surface 2 b that is on the oppositeside from the first main surface 2 a. An IDT electrode 3 and reflectors4 and 5 are provided as functional electrodes on the first main surface2 a. The acoustic wave device 1 is preferably configured as a one-portsurface acoustic wave resonator, for example. However, the structure ofthe functional electrodes including the IDT electrode 3 and thereflectors 4 and 5 and so on is not limited to this example. Functionalelectrodes may be provided so as to define an acoustic wave filter andother acoustic wave elements, for example.

Wiring line electrodes 6 and 7 are provided on the first main surface 2a. The wiring line electrodes 6 and 7 are electrically connected to theIDT electrode 3 in a portion that is not illustrated.

A frame-shaped support layer 9 is provided on the first main surface 2 aof the piezoelectric substrate 2. The support layer 9 defines a hollowportion X. The support layer 9 surrounds the portion where the IDTelectrode 3 is provided. The support layer 9 is made of a suitableinsulating material such as, for example, a composite resin.

A cover 10 is fixed to the support layer 9 so as to close theframe-shaped opening of the support layer 9. The cover 10 is preferablymade of, for example, an insulating ceramic such as alumina or acomposite resin. The region enclosed by the cover 10, the support layer9, and the piezoelectric substrate 2 defines the hollow portion X. TheIDT electrode 3 is located inside the hollow portion X.

A plurality of through holes penetrate through the support layer 9 andthe cover 10. Under bump metal layers 11 and 12 are respectivelyprovided inside the through holes. One end of the under bump metal layer11 is bonded to the wiring line electrode 6 and the other end of theunder bump metal layer 11 is bonded to a metal bump 13. One end of theunder bump metal layer 12 is bonded to the wiring line electrode 7 andthe other end of the under bump metal layer 12 is bonded to a metal bump14. The metal bumps 13 and 14 are located on the outside of the cover10.

The acoustic wave device 1 can be mounted on, for example a printedcircuit board or the like using the metal bumps 13 and 14. The metalbumps 13 and 14 are made of a metal or an alloy such as solder or Au,for example.

The IDT electrode 3, the reflectors 4 and 5, the wiring line electrodes6 and 7, and the under bump metal layers 11 and 12 are made of asuitable metal or alloy. Furthermore, the IDT electrode 3, thereflectors 4 and 5, and so on may be made of multilayer metal filmsincluding a plurality of metal films.

A Li₂CO₃ layer 8 is stacked on the second main surface 2 b of thepiezoelectric substrate 2. In FIG. 1 , the Li₂CO₃ layer 8 covers theentire or substantially the entire second main surface 2 b. However, theLi₂CO₃ layer 8 may instead be provided on only a portion of the secondmain surface 2 b. In other words, the Li₂CO₃ layer 8 may be provided ina partial manner on a portion of the second main surface 2 b of thepiezoelectric substrate 2. In this case, the planar shape and patternshape of the Li₂CO₃ layer 8 are not particularly limited. In otherwords, an arbitrary planar shape may be used such as, for example, aplurality of dot-shaped Li₂CO₃ layers 8.

The electrical resistance, i.e., the surface resistivity of Li₂CO₃ isabout 10⁵Ω to 10⁷Ω, for example. On the other hand, the surfaceresistivity of LiNbO₃ is greater than or equal to about 10⁸Ω, forexample. In other words, the electrical resistance of Li₂CO₃ is lowerthan that of LiNbO₃.

A transporting arm is used in a process of manufacturing or mounting anacoustic wave device. In this case, at the mother piezoelectric waferstage prior to the mother piezoelectric wafer being divided intoindividual chips, the transporting arm is used to support the surface ofthe piezoelectric wafer on the opposite side from the surface on whichthe IDT electrode will be formed and transport the piezoelectric wafer.If the piezoelectric wafer is susceptible to becoming charged, there isa risk of the piezoelectric wafer becoming stuck to the transporting armand not releasing from the transporting arm.

In contrast, in the acoustic wave device 1, the Li₂CO₃ layer 8 isprovided on the second main surface 2 b of the piezoelectric substrate 2and, therefore, the piezoelectric substrate 2 is not susceptible tobecoming charged. Therefore, the acoustic wave device 1 whosepiezoelectric substrate is at the wafer stage prior to dividing of thewafer can be smoothly transported by the transporting arm. In addition,the Li₂CO₃ layer 8 can be easily formed by irradiating one surface ofthe piezoelectric substrate at the wafer stage with a laser. Therefore,it is unlikely that a reduction in productivity will occur.

FIG. 2 is a front sectional view of an acoustic wave device according toa second preferred embodiment of the present invention.

A piezoelectric substrate 22 of an acoustic wave device 21 is preferablymade of LiNbO₃ or LiTaO₃, for example. In the acoustic wave device 21,wiring line electrodes 6 and 7 are connected to terminal electrodes 25and 26 via connection electrodes 23 and 24. The wiring line electrodes 6and 7 are provided on a first main surface 22 a of the piezoelectricsubstrate 22. The terminal electrodes 25 and 26 are stacked on a secondmain surface 22 b of the piezoelectric substrate 22 with a Li₂CO₃ layer8 and insulating layers 27 and 28 interposed therebetween.

First ends of the connection electrodes 23 and 24 are connected to thewiring line electrodes 6 and 7 and second ends of the connectionelectrodes 23 and 24 are connected to the terminal electrodes 25 and 26.Therefore, the acoustic wave device 21 can be mounted on a printedcircuit board or the like, for example, using the terminal electrodes 25and 26. The connection electrodes 23 and 24 extend along the sidesurfaces of the piezoelectric substrate 22, which connect the first mainsurface 22 a and the second main surface 22 b to each other.

The boundaries between the wiring line electrodes 6 and 7 and theconnection electrodes 23 and 24 and the boundaries between theconnection electrodes 23 and 24 and the terminal electrodes 25 and 26are not clear in FIG. 2 . However, the positions of these boundaries arenot particularly restricted since these members are manufactured in anintegrated manner using the same metal material. For example, theportions located on the first main surface 22 a may be regarded as thewiring electrodes 6 and 7 and the portions located on the insulatinglayers 27 and 28 may be regarded as the terminal electrodes 25 and 26.Furthermore, the portions that connect the wiring line electrodes 6 and7 and the terminal electrodes 25 and 26 to each other may be regarded asthe connection electrodes 23 and 24.

The connection electrodes 23 and 24 and the terminal electrodes 25 and26 can be made using a metal material similarly to the wiring lineelectrodes 6 and 7.

The insulating layers 27 and 28 are preferably made of an insulatingceramic or a composite resin such as silicon oxide or siliconoxynitride, for example.

In the acoustic wave device 21, a cover 10 is provided to close theopening of a support layer 9. Thus, a hollow portion X is provided.

The rest of the configuration of the acoustic wave device 21 is the sameor substantially the same as that of the acoustic wave device 1.Therefore, the same portions are denoted by the same reference symbolsand description thereof is omitted.

In the present preferred embodiment, the Li₂CO₃ layer 8 is provided onthe second main surface 22 b. Therefore, in the case of the acousticwave device 21, the piezoelectric substrate 22 is not susceptible tobecoming charged when transporting the acoustic wave device 21 or whentransporting a piezoelectric substrate at the mother wafer stage using atransporting arm. Therefore, transportation using a transporting arm canbe easily performed. As described above, the Li₂CO₃ layer 8 can beeasily formed using laser irradiation. Therefore, it is unlikely that areduction in productivity will occur.

Next, a specific description will be provided of an example of theprocess of forming the Li₂CO₃ layer 8 by laser irradiation whilereferring to FIGS. 3 to 8 .

FIG. 3 is a diagram illustrating the relationship between laser lightoutput and the post-laser-irradiation surface resistivity of the surfaceof a wafer irradiated with a laser when the surface of a piezoelectricwafer made of LiNbO₃ is irradiated with laser light. A nanosecond pulselaser was used as the laser. The wavelength was about 355 nm, the pulsewidth was about 10 ns, the frequency was about 250 kHz, the beamdiameter was about 25 μm, the scanning speed was about 500 nm/s, and thescanning pitch was about 20 μm. Under these conditions, the laser outputwas changed to various values and the corresponding values of thesurface resistivity of the surface of the piezoelectric substrate wereobtained.

As is clear from FIG. 3 , the surface resistivity was high with a valuegreater than or equal to about 1.0×10⁸Ω in a laser output range from 0W, i.e., prior to the laser irradiation, to about 0.2 W. In contrast,the surface resistivity dropped when the laser output exceeded about 0.3W, and in particular, the surface resistivity had a value less than orequal to about 1.0×10⁷Ω when the laser output exceeded about 0.4 W. Thisis attributed to the formation of a low-resistance Li₂CO₃ layer on thesurface of the piezoelectric substrate due to the laser irradiation.

FIG. 4 illustrates the relationship between the laser light output andthe post-laser-irradiation surface resistivity of the surface of apiezoelectric wafer irradiated with a laser when a laser is irradiatedin the same or substantially the same manner as described above using apiezoelectric wafer made of LiTaO₃.

In this case, the laser irradiation conditions were as follows. Ananosecond pulse laser was used. The wavelength was about 532 nm, thepulse width was about 25 ns, the frequency was about 500 kHz, the beamdiameter was about 30 μm, the scanning speed was about 100 nm/s, and thescanning pitch was about 20 μm. Under these conditions, the laser outputwas changed to various values and the entirety or substantially theentirety of one surface of a piezoelectric wafer was processed.

As is clear from FIG. 4 , the surface resistivity was high with a valuegreater than or equal to about 1.0×10¹⁰Ω in a laser output range from 0W, i.e., prior to the laser irradiation, to about 0.3 W. In contrast, itis clear that the surface resistivity rapidly dropped to less than orequal to about 1.0×10⁷Ω when the laser output exceeded about 0.4 W. Thisis attributed to the formation of a low-resistance Li₂CO₃ layer on thesurface of the piezoelectric substrate due to the laser irradiation.

Next, specific examples 1 and 2 of preferred embodiments of the presentinvention will be described.

Example 1

A piezoelectric wafer made of LiNbO₃ was prepared in order tomanufacture the acoustic wave device 1 according to the first preferredembodiment. The surface of the piezoelectric wafer on the opposite sidefrom the surface where the IDT electrode was to be formed was subjectedto laser irradiation. A nanosecond pulse laser was used and theirradiation conditions were as follows.

The wavelength was about 355 nm, the pulse width was about 10 ns, thefrequency was about 250 kHz, the average output was about 0.4 W, thebeam diameter was about 25 μm, the scanning speed was about 500 nm/s,and the scanning pitch was about 20 μm. The entirety or substantiallythe entirety of one surface of the piezoelectric wafer was processedunder these conditions. The acoustic wave device 1 was manufacturedusing the piezoelectric wafer obtained as described above. The incidenceof transportation failures in this manufacturing process, i.e., theincidence of failures in which the equipment stopped due to thepiezoelectric wafer becoming charged and sticking to the transportingarm, was close to 0%. For comparison, the incidence of suchtransportation failures in a comparative example 1, in which apiezoelectric wafer that had not been subjected to laser processing wasused, was about 3%.

FIG. 5 is a diagram illustrating the XPS spectra of C1s of the LiNbO₃substrates of the acoustic wave devices of example 1 and comparativeexample 1. The solid line represents the results of example 1 and thebroken line represents the results of comparative example 1. The resultsof example 1 are results for a surface that has been subjected to thelaser processing described above. It is clear from FIG. 5 that thebinding energy intensity is high at about 289.7 eV, which indicates thebinding energy of O═C—O, in example 1, whereas the intensity at thisbinding energy value is low in comparative example 1.

On the other hand, FIG. 6 is a diagram illustrating the XPS spectra ofLi1s of the LiNbO₃ substrates of the acoustic wave devices of example 1and comparative example 1. In FIG. 6 as well, the solid line representsthe results of example 1 and the broken line represents the results ofcomparative example 1.

It can be seen that the intensity at about 55.4 eV resulting from Li₂CO₃is high with a value of about 0.60 a.u. in example 1, whereas theintensity at this binding energy value is low in comparative example 1.

Therefore, it is clear from FIGS. 5 and 6 that a Li₂CO₃ layer is formedon one surface of the piezoelectric wafer by laser irradiation inexample 1.

Example 2

LiTaO₃ was prepared for the piezoelectric wafer instead of LiNbO₃ andthe piezoelectric wafer was irradiated with a laser. The laserirradiation conditions were as follows.

The wavelength was about 532 nm, the pulse width was about 25 ns, thefrequency was about 500 kHz, the average output was about 0.5 W, thebeam diameter was about 30 μm, the scanning speed was about 100 nm/s,and the scanning pitch was about 20 μm. The entire or substantially theentire surface of the piezoelectric wafer was irradiated with laserlight under these conditions.

The acoustic wave device 1 of Example 2 was obtained with the WLPstructure manufacturing process in the same or substantially the sameway as in example 1 using a piezoelectric wafer obtained as describedabove. Furthermore, an acoustic wave device of a comparative example 2was prepared in the same or substantially the same way as in example 2except that a piezoelectric wafer was used that had not been subjectedto laser processing.

In example 2, the incidence of failures in which the equipment stoppeddue to the piezoelectric wafer becoming charged and sticking to thetransporting arm was 0%. In contrast, in comparative example 2, theincidence of transportation failures was about 3%.

As described above, it was also possible to reliably reduce or preventtransportation failures by providing a Li₂CO₃ layer in the acoustic wavedevice 1 in which LiTaO₃ is used.

FIG. 7 is a diagram illustrating XPS spectra of C1s of second mainsurfaces of the piezoelectric substrates made of LiTaO₃ in the acousticwave devices of example 2 and comparative example 2. FIG. 8 is a diagramillustrating XPS spectra of Li1s of the second main surfaces of thepiezoelectric substrates made of LiTaO₃ in the acoustic wave devices ofexample 2 and comparative example 2. In FIGS. 7 and 8 , the solid linerepresents the results of example 2 and the broken line represents theresults of comparative example 2. The XPS spectra of the laserirradiated surface in example 2 are illustrated.

It is clear from FIG. 7 that the intensity at about 289.7 eV, which isthe value of the binding energy of the O═C—O bond, is much higher inexample 2 than in comparative example 2. In addition, it is clear fromFIG. 8 that the intensity at a binding energy value of about 55.4 eV,which arises from Li₂CO₃, is also higher in example 2 than incomparative example 2.

Therefore, it is also clear that a Li₂CO₃ layer is formed by theabove-described laser irradiation in example 2.

In examples 1 and 2 described above, a nanosecond pulse laser was used,but the laser device used to radiate the laser light is not particularlylimited. For example, a Kr—F excimer laser or a femtosecond laser may beused. In addition, the irradiation conditions only need to be selectedin accordance with the laser device, the area and thickness of theLi₂CO₃ layer to be formed, and so on and are not particularly limited.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

What is claimed is:
 1. An acoustic wave device comprising: apiezoelectric substrate made of LiNbO₃ or LiTaO₃ and including first andsecond main surfaces that face each other; an IDT electrode provided onthe first main surface of the piezoelectric substrate; and a Li₂CO₃layer provided on the second main surface of the piezoelectricsubstrate.
 2. The acoustic wave device according to claim 1, wherein theLi₂CO₃ layer is provided on a portion of the second main surface of thepiezoelectric substrate.
 3. The acoustic wave device according to claim1, wherein the piezoelectric substrate is made of LiNbO₃.
 4. Theacoustic wave device according to claim 1, wherein the Li₂CO₃ layerincludes a pattern shape.
 5. The acoustic wave device according to claim1, wherein the IDT electrode is located inside a hollow portion; and theLi₂CO₃ layer overlaps with the hollow portion.
 6. The acoustic wavedevice according to claim 1, wherein the Li₂CO₃ layer overlaps with theIDT electrode.
 7. The acoustic wave device according to claim 1, furthercomprising: a terminal electrode provided on the second main surface ofthe piezoelectric substrate; wherein the Li₂CO₃ layer overlaps with theterminal electrode.
 8. The acoustic wave device according to claim 1,further comprising a wiring electrode located on the first main surfaceof the piezoelectric substrate.
 9. The acoustic wave device according toclaim 1, further comprising: a wiring electrode located on the firstmain surface of the piezoelectric substrate; wherein the Li₂CO₃ layeroverlaps with the wiring electrode.
 10. An acoustic wave devicecomprising: a piezoelectric substrate including first and second mainsurfaces that face each other; a functional electrode provided on thefirst main surface of the piezoelectric substrate to excite acousticwaves; and a first layer provided on the second main surface of thepiezoelectric substrate; wherein a surface resistivity of the firstlayer is lower than a surface resistivity of the piezoelectricsubstrate.
 11. The acoustic wave device according to claim 10, whereinthe surface resistivity of the first layer is about 10⁵Ω to 10⁷Ω. 12.The acoustic wave device according to claim 10, wherein the surfaceresistivity of resistivity of the piezoelectric substrate is greaterthan or equal to about 10⁸Ω.
 13. The acoustic wave device according toclaim 10, wherein the first layer is provided on a portion of the secondmain surface of the piezoelectric substrate.
 14. The acoustic wavedevice according to claim 10, wherein the piezoelectric substrate ismade of LiNbO₃.
 15. The acoustic wave device according to claim 10,wherein the functional electrode is located inside a hollow portion; andthe first layer overlaps with the hollow portion.
 16. The acoustic wavedevice according to claim 10, wherein functional electrode is an IDTelectrode; and the first layer overlaps with the IDT electrode.
 17. Anacoustic wave device comprising: a piezoelectric substrate made ofLiNbO₃ or LiTaO₃ and including first and second main surfaces that faceeach other; a functional electrode provided on the first main surface ofthe piezoelectric substrate to excite acoustic waves; and a laseredlayer formed by laser irradiation of the piezoelectric substrateprovided on the second main surface of the piezoelectric substrate. 18.The acoustic wave device according to claim 17, wherein the laseredlayer is provided on a portion of the second main surface of thepiezoelectric substrate.
 19. The acoustic wave device according to claim17, wherein the piezoelectric substrate is made of LiNbO₃.
 20. Theacoustic wave device according to claim 17, wherein functional electrodeis an IDT electrode; and the first layer overlaps with the IDTelectrode.